作者: Zhikuo Tao , Shiqi Liu , Henan Fang , Lin Chen , Jiangwei Chen
DOI: 10.1016/J.MATLET.2018.12.089
关键词: Weak localization 、 Condensed matter physics 、 Metal 、 Iron nitride 、 Ferromagnetism 、 Single phase 、 Scattering 、 Quantum interference 、 Materials science 、 Nitride
摘要: Abstract Magnetic and transport properties of iron nitride compounds are closely related to the ratio Fe:N. In this letter, we report a successful growth pure single-phase N-rich (e-Fe2–3N γ″-FeN) films on Al2O3. e-Fe2–3N shows ferromagnetic behavior while γ″-FeN nonmagnetic behavior. Same with other N-poor nitrides, presents metallic nature. particular, weak localization in quantum interference effects (QIEs) spin-dependent scattering phenomena observed e-Fe2–3N. Different known semiconductor-like property. These findings offer great opportunities for designing magnetoelectronic devices based compounds.