Programmable metallization cell with ion buffer layer
作者： Feng-Ming Lee , Yi-Chou Chen , Yu-Yu Lin
DOI:
关键词: Optoelectronics 、 Programmable metallization cell 、 Voltage 、 Analytical chemistry 、 Ion 、 Electrode 、 Layer (electronics) 、 Materials science 、 Buffer (optical fiber) 、 Electrical conductor 、 Electrolyte
摘要: A programmable metallization device, comprises a first electrode; memory layer electrically coupled to the electrode and adapted for electrolytic formation destruction of conducting bridge therethrough; an ion-supplying containing source ions metal element capable diffusion into out layer; conductive ion buffer between layer, which allows therethrough said ions; second layer. Circuitry is device apply bias voltages electrodes induce creation bridges including in The can improve retention by reducing likelihood that metallic will be absorbed supplying
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