Front to back resistive random access memory cells
作者： Frank W. Hawley , John McCollum , Jonathan Greene
DOI:
关键词:
摘要: A resistive random access memory device formed on a semiconductor substrate comprises an interlayer dielectric having via therethrough. chemical-mechanical-polishing stop layer is over the dielectric. barrier metal liner lines walls of via. conductive plug in first and electrical contact with plug. layer. An ion source layer, includes therethrough communicating second interconnect
google.de 参考文章(125)
Michael N. Kozicki, Wheelchair for controlled environments ,(1994)
Michael N. Kozicki, Carbon enhanced vapor etching ,(1988)
Yoshio Manabe, Field-programmable gate array with ferroelectric thin film ,(2000)
Michael N. Kozicki, Programmable chip-to-substrate interconnect structure and device and method of forming same ,(2002)
Michael N. Kozicki, Programmable interconnection system for electrical circuits ,(1999)
Craig Perlov, Frank Jeffrey, Warren Jackson, Carl Taussig, Silver island anti-fuse ,(2004)
Hsin-Ming Chen, Ching-Sung Yang, Hau-yan Lu, Non-volatile memory structure and method for manufacturing the same ,(2011)
John L. McCollum, Antifuse-based FPGA architecture without high-voltage isolation transistors ,(1994)
Michael Kozicki, Stefan Enderling, Anthony Walton, Microelectromechanical structures, devices including the structures, and methods of forming and tuning same ,(2005)
Akira Umezawa, Shigeru Atsumi, Toru Tanzawa, Tadayuki Taura, Data-erasable non-volatile semiconductor memory device ,(1999)