作者: V. Mortet , J. D'Haen , J. Potmesil , R. Kravets , I. Drbohlav
DOI: 10.1016/J.DIAMOND.2004.12.057
关键词: Nanodiamond 、 Materials science 、 Substrate (electronics) 、 Silicon 、 Diamond 、 Thin film 、 Scanning electron microscope 、 Optoelectronics 、 Nucleation 、 Thin layers 、 Analytical chemistry
摘要: Abstract We have grown a variety of thin nanocrystalline diamond layers on silicon substrates with thicknesses ranging from 100 to 2000 nm. Using bias enhanced nucleation for density over 10 cm −2 and changing the deposition conditions and/or using argon dilution we obtained nanodiamond different structural properties. The process growth was monitored Scanning Electron Microscopy (SEM); cross-section SEM micro-Raman measurements were used access microstructure. Surface topography followed by Atomic Force Microscopy. Windows opened in substrate get self-supporting membrane. Diamond membranes are very smooth, homogeneous transparent UV IR. Fourier Transform Photocurrent Spectroscopy has been main electronic defects gap this material. New observed peak photoionization energy 0.37 0.40 eV.