Effect of lead additive on the ferroelectric properties and microstructure of SrxPbyBi2zTa2O9 thin films
作者： San-Yuan Chen , Ving-Ching Lee
DOI: 10.1063/1.373491
关键词: Thin film 、 Ferroelectricity 、 Mineralogy 、 Electron 、 Ferroelectric ceramics 、 Polarization (electrochemistry) 、 Crystal structure 、 Grain growth 、 Materials science 、 Composite material 、 Microstructure
摘要: Ferroelectric thin films of bismuth-containing layered perovskite SrxPbyBi2zTa2O9 have been prepared using the metalorganic decomposition method. The effect both Sr and Pb content on crystal structure, microstructure, ferroelectric properties SrxPbyBi2.3Ta2O9 was investigated. A maximum remanent polarization 2Pr=19.2 μC/cm2 obtained for SrxPb0.2Bi2.3Ta2O9 film with 20 mol % Sr-deficient composition as at 800 °C, which could be compromising effects grain growth second phase formation BiTaO4. substitution Bi is accompanied by occurrence oxygen vacancies to compensate charge balance, responsible mechanism in Sr0.8Pb0.2Bi2.3Ta2O9 films. Fatigue endurance Sr0.8Bi2.3Ta2O9 becomes problematic after 109 cycles a decrease 85% original value. This phenomenon related electron injection creation traps due occupation o...
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