New low temperature processing of sol-gel SrBi2Ta2O9 thin films
作者： Yasuyuki Ito , Maho Ushikubo , Seiichi Yokoyama , Hironori Matsunaga , Tsutomu Atsuki
DOI: 10.1080/10584589708019984
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摘要: Abstract A new low temperature processing method to prepare SrBi2Ta2O9 thin films is proposed. These were prepared on Pt/Ta/SiO2/Si substrates by a sol-gel method, and their structural electrical properties investigated. Films annealed before after the top Pt electrode deposition, respectively. The 1st annealing was performed in 760 Torr-oxygen ambient at 600°C for 30 min; 2nd 5 600 °C min. well crystallized fine-grained annealing. characteristics of 200-nm-thick film obtained this process, i.e., remanent polarization (Pr), coercive field (Ec), leakage current density (II), as follows; Pr = 8.5 μC/cm2, Ec=30 kV/cm, IL=1×10−7 A/cm2 (at 3V). This very attractive highly integrated ferroelectric nonvolatile memory applications.
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