Ferroelectric Properties of New Chemical Solution Derived SBT Thin Films for Non-Volatile Memory Devices
作者： Seung-Hyun Kim , D.J. Kim , J. Im , C.E. Kim , Angus I. Kingon
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摘要: Ferroelectric SBT (Sr/Bi/Ta = 0.8/2.3/2) thin films on Pt/ZrO2/SiO2/Si were successfully prepared by using an alkanolamine modified chemical solution deposition method. Acetic acid as a solvent led to the formation of water in solution, which might continuously induce hydrolysis and condensation precursors, leading reducing stability with aging time. It was observed that provided retarding rates. This could be used long up 30 days without any appreciable change properties. The typical hysteresis loop obtained at 2 V, it fully saturated even below applied voltage 3 V (2Pr ≈ 16 μC/cm2). measured 2Pr value film 5 almost 20 μC/cm2. Fatigue breakdown characteristics films, showed stable behavior, negligible degradation 1010 cycles.
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