Potassium niobate thin films prepared through polymeric precursor method
作者： A.Z Simões , A Ries , C.S Riccardi , A.H Gonzalez , M.A Zaghete
DOI: 10.1016/J.MATLET.2004.03.025
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摘要: Thin films of potassium niobate were deposited on (100) Si substrates by the polymeric precursor method (Pechini method). Annealing in static air was performed at 600° C for 20 h. The obtained characterized X-ray diffraction and atomic force microscopy (AFM). Electrical characterization pointed to ferroelectricity via hysteresis loop. dielectric constant, dissipation factor resistance measured frequency region from 10 Hz MHz. At 1 MHz, constant 158 0.11.
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