Voltage offsets and imprint mechanism in SrBi2Ta2O9 thin films
作者： H. N. Al‐Shareef , D. Dimos , W. L. Warren , B. A. Tuttle
DOI: 10.1063/1.363440
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摘要: It is shown that voltage shifts in the hysteresis response of SrBi2Ta2O9 (SBT) thin‐film capacitors can be induced using both thermal and optical methods. These are important since they lead to imprint failure ferroelectric memory devices. suggested curve SBT caused by trapping electronic charge carriers near film/electrode interfaces, as has been previously reported for Pb(Zr,Ti)O3 (PZT) system. In addition, a direct correlation established between magnitude sign remanent polarization (Pr) thermally (Vi), where Vi=αPr+β. also found that, unlike PZT system, smaller than those optically induced. One possible implication this result contribution defect–dipole complexes negligible. We suggest defect‐dipole i...
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