Accurate measurement of layer dimensions using XRF
作者： Boris Yokhin , Isaac Mazor , Dileep Agnihotri , Jeremy O'Dell
DOI:
关键词: Thin film 、 Planar 、 Materials science 、 Sample (graphics) 、 Polishing 、 Perpendicular 、 Layer (electronics) 、 Surface layer 、 Optics 、 Intensity (heat transfer)
摘要: A method for inspection of a sample includes directing an excitation beam to impinge on area planar that feature having sidewalls perpendicular plane the sample, thin film thereon. An intensity X-ray fluorescence (XRF) emitted from responsively is measured, and thickness assessed based intensity. In another method, width recesses in surface layer material deposited after polishing are using XRF.
google.co.uk 参考文章(106)
Masao Satoh, Micro fluorescent X-ray analyzer ,(1997)
Hunter Ellinger, Ira Lon Dr. Morgan, Thomas Stephens, Morris Dr. Taylor, Forrest F. Hopkins, Method and apparatus for dimensional analysis and flaw detection of continuously produced tubular objects ,(1986)
Naoki Awaji, Satoshi Komiya, Shunji Kashiwagi, Film thickness measuring and film forming method ,(1996)
William Johnson, Louis N. Koppel, System and method for X-ray reflectometry measurement of low density films ,(2002)
Gary F. Relihan, Jerry L. Neitzell, Joseph J. Grass, Automatic X-ray entrance dose compensation ,(1984)
William L. Johnson, Arthur R. Williams, Versatile focusing radiation analyzer ,(1981)
Tim Z. Hossain, John K. Lowell, Method and apparatus for the detection of light elements on the surface of a semiconductor substrate using x-ray fluorescence (XRF) ,(1996)
Kazuhiko Omote, Alexander Ulyanenkov, Shigeru Kawamura, Analyzing method for non-uniform-density sample and device and system thereof ,(2001)
Michael K. Templeton, Bhanwar Singh, Ramkumar Subramanian, Bharath Rangarajan, Systems and methods to determine seed layer thickness of trench sidewalls ,(2002)
Ilya Grodnensky, Eric R. Johnson, Kazuo Ushida, Kyoichi Suwa, Apparatus for preforming measurement of a dimension of a test mark for semiconductor processing ,(2002)