Growth and properties of GaN and AlN layers on silver substrates

摘要: We report on the preparation and properties of GaN AlN layers grown by molecular-beam epitaxy silver metal substrates. X-ray diffraction rocking curves show polycrystalline character with high preferential GaN(11-22) orientation. An intermetallic phase Ga3Ag is found at GaN∕Ag interface. On other hand, exhibit a monocrystalline structure growth direction (0002). Schottky diodes prepared good rectifying behavior relatively low leakage current (∼10−3A∕cm2). These results indicate that III-nitride metallic substrates might be used for low-cost large-area electronic photonic devices.