Epitaxial growth of group III-nitride films by pulsed laser deposition and their use in the development of LED devices
作者： Guoqiang Li , Wenliang Wang , Weijia Yang , Haiyan Wang
DOI: 10.1016/J.SURFREP.2015.06.001
关键词: Metalorganic vapour phase epitaxy 、 Epitaxy 、 Materials science 、 Pulsed laser deposition 、 Laser 、 Molecular beam epitaxy 、 Light-emitting diode 、 Nitride 、 Chemical vapor deposition 、 Optoelectronics
摘要: … PLD and their use in the development of LED devices. The surface morphology, interfacial … realize LED structures, which provides great opportunities for commercialization of LEDs on …
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