Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111)
作者： F. Natali , F. Semond , J. Massies , D. Byrne , S. Laügt
DOI: 10.1063/1.1558217
关键词:
摘要: We report on the influence of structural properties refractive index AlN films grown Si(111) substrates by molecular-beam epitaxy using ammonia. The are assessed reflection high-energy electron diffraction, atomic force microscopy, transmission and x-ray diffraction. Refractive values deduced from room-temperature spectroscopic ellipsometry. Optical data analysis is performed Kramers-Kronig relation in transparent spectral region, 1.6 to 3.2 eV. Evidence presented showing strain dislocation density layer index.
harvard.edu
scitation.org
archives-ouvertes.fr
aip.org
sci-hub.se 参考文章(18)
Shuji Nakamura, Gerhard Fasol, The Blue Laser Diode: GaN based Light Emitters and Lasers ,(1997)
E. Dogheche, B. Belgacem, D. Remiens, P. Ruterana, F. Omnes, Interface properties of AlxGa1−xN/AlN heterostructures from optical waveguiding information Applied Physics Letters. ,vol. 75, pp. 3324- 3326 ,(1999) , 10.1063/1.125339
Manuel Cardona, Peter Y. Yu, Fundamentals of Semiconductors ,(1995)
Ümit Özgür, Grady Webb-Wood, Henry O Everitt, Feng Yun, Hadis Morkoç, None, Systematic measurement of AlxGa1−xN refractive indices Applied Physics Letters. ,vol. 79, pp. 4103- 4105 ,(2001) , 10.1063/1.1426270
F. Semond, B. Damilano, S. Vézian, N. Grandjean, M. Leroux, J. Massies, GaN on Si(111): From Growth Optimization to Optical Properties of Quantum Well Structures Physica Status Solidi B-basic Solid State Physics. ,vol. 216, pp. 101- 105 ,(1999) , 10.1002/(SICI)1521-3951(199911)216:1<101::AID-PSSB101>3.0.CO;2-R
D. Brunner, H. Angerer, E. Bustarret, F. Freudenberg, R. Höpler, R. Dimitrov, O. Ambacher, M. Stutzmann, Optical constants of epitaxial AlGaN films and their temperature dependence Journal of Applied Physics. ,vol. 82, pp. 5090- 5096 ,(1997) , 10.1063/1.366309
Xiao Tang, Yifang Yuan, Kobchat Wongchotigul, Michael G. Spencer, Dispersion properties of aluminum nitride as measured by an optical waveguide technique Applied Physics Letters. ,vol. 70, pp. 3206- 3208 ,(1997) , 10.1063/1.119127
H. Lahrèche, M. Leroux, M. Laügt, M. Vaille, B. Beaumont, P. Gibart, Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy Journal of Applied Physics. ,vol. 87, pp. 577- 583 ,(2000) , 10.1063/1.371902
Kwiseon Kim, Walter R. L. Lambrecht, Benjamin Segall, Mark van Schilfgaarde, Effective masses and valence-band splittings in GaN and AlN Physical Review B. ,vol. 56, pp. 7363- 7375 ,(1997) , 10.1103/PHYSREVB.56.7363
S. Shokhovets, R. Goldhahn, V. Cimalla, T. S. Cheng, C. T. Foxon, Reflectivity study of hexagonal GaN films grown on GaAs: Surface roughness, interface layer, and refractive index Journal of Applied Physics. ,vol. 84, pp. 1561- 1566 ,(1998) , 10.1063/1.368223