Epitaxial growth of GdN on silicon substrate using an AlN buffer layer
作者： F. Natali , N.O.V. Plank , J. Galipaud , B.J. Ruck , H.J. Trodahl
DOI: 10.1016/J.JCRYSGRO.2010.09.030
关键词: Electron diffraction 、 Reflection high-energy electron diffraction 、 Materials science 、 Curie temperature 、 Thin film 、 Channelling 、 Epitaxy 、 Doping 、 Condensed matter physics 、 Silicon
摘要: Abstract We report on the epitaxial growth of intrinsic ferromagnetic semiconductor GdN Si (1 1 1) substrates buffered by a thick AlN layer, forming heteroepitaxial system with promise for spintronics. Growth is achieved depositing Gd in presence unactivated N 2 gas, demonstrating reactivity at surface that sufficient to grow near stoichiometric only when :Gd flux ratio least 100. Reflection high-energy electron diffraction and X-ray show fully (1 1 1)-oriented films. The quality films assessed Rutherford backscattering spectroscopy carried out random channelling conditions. Magnetic measurements exhibit Curie temperature 65 K saturation magnetisation 7 μ B /Gd agreement previous bulk thin-film data. Hall effect resistance data establish are heavily doped semiconductors, suggesting up 1% sites vacant.
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