Electronic transitions in GdN band structure

摘要: Using the near-infrared (NIR) absorbance spectroscopy, electronic transitions and spin polarization of GdN epitaxial film have been investigated; was grown by a reactive rf sputtering technique. The exhibited three broad bands in NIR frequency regimes; those are attributable primarily to minority majority at X-point an indirect transition along Γ-X symmetric direction Brillouin zone. We experimentally observe pronounced red-shift band gap when cooling down below Curie temperature which is ascribed orbital-dependent coulomb interactions Gd-5dxy electrons, tend push-up N-2p bands. On other hand, we evaluated 0.17 (±0.005), indicates that has almost 100% spin-polarized carriers. Furthermore, experimental result consistent with previous reports thus well-reproduced. Arrott plots evidenced 36 K large moment explained nitrogen vacancies intra-atomic exchange interaction.