4 f conduction in the magnetic semiconductor NdN
作者： W. F. Holmes-Hewett , R. G. Buckley , B. J. Ruck , F. Natali , H. J. Trodahl
DOI: 10.1103/PHYSREVB.100.195119
关键词: Ferromagnetic semiconductor 、 Materials science 、 Conduction band 、 Conduction channel 、 Absorption (electromagnetic radiation) 、 Magnetic semiconductor 、 Condensed matter physics 、 Hall effect 、 Thermal conduction
摘要: We report the growth of films intrinsic ferromagnetic semiconductor NdN and investigate their optical transport properties. There is clear evidence a strong anomalous Hall effect as expected from $4f$ conduction channel, supported by an absorption into or $4f/5d$ hybridized tail at base band. The results reveal heavy-fermion band lying where it can be occupied controllable levels with nitrogen-vacancy donors.
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