Optical properties of high-Al-content crack free AlxGa1−xN (x<0.67) films grown on Si(111) by molecular-beam epitaxy
作者： F. Natali , D. Byrne , M. Leroux , F. Semond , J. Massies
DOI: 10.1016/J.SSC.2004.09.017
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摘要: Abstract We report on the optical properties of high-Al-content crack free Al x Ga 1− N ( b =1 eV is deduced from these measurements. The excitonic linewidth increases as a function concentration. observed variation agrees very well with one calculated using model in which broadening effect assumed to be due alloy compositional disordering.
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B. Gil, Group III nitride semiconductor compounds : physics and applications Clarendon Press , Oxford University Press. ,(1998)
Feng Yun, Michael A. Reshchikov, Lei He, Thomas King, Hadis Morkoç, Steve W. Novak, Luncun Wei, Energy band bowing parameter in AlxGa1-xN alloys Journal of Applied Physics. ,vol. 92, pp. 4837- 4839 ,(2002) , 10.1063/1.1508420
E. F. Schubert, E. O. Göbel, Y. Horikoshi, K. Ploog, H. J. Queisser, Alloy broadening in photoluminescence spectra ofAlxGa1−xAs Physical Review B. ,vol. 30, pp. 813- 820 ,(1984) , 10.1103/PHYSREVB.30.813
S. R. Lee, A. F. Wright, M. H. Crawford, G. A. Petersen, J. Han, R. M. Biefeld, The band-gap bowing of AlxGa1−xN alloys Applied Physics Letters. ,vol. 74, pp. 3344- 3346 ,(1999) , 10.1063/1.123339
F. Natali, F. Semond, J. Massies, D. Byrne, S. Laügt, O. Tottereau, P. Vennéguès, E. Dogheche, E. Dumont, Correlation between threading dislocation density and the refractive index of AlN grown by molecular-beam epitaxy on Si(111) Applied Physics Letters. ,vol. 82, pp. 1386- 1388 ,(2003) , 10.1063/1.1558217
A. Hirano, C. Pernot, M. Iwaya, T. Detchprohm, H. Amano, I. Akasaki, Demonstration of Flame Detection in Room Light Background by Solar‐Blind AlGaN PIN Photodiode Physica Status Solidi (a). ,vol. 188, pp. 293- 296 ,(2001) , 10.1002/1521-396X(200111)188:1<293::AID-PSSA293>3.0.CO;2-D
S. A. Nikishin, N. N. Faleev, A. S. Zubrilov, V. G. Antipov, H. Temkin, Growth of AlGaN on Si(111) by gas source molecular beam epitaxy Applied Physics Letters. ,vol. 76, pp. 3028- 3030 ,(2000) , 10.1063/1.126568
S. Einfeldt, H. Heinke, V. Kirchner, D. Hommel, Strain relaxation in AlGaN/GaN superlattices grown on GaN Journal of Applied Physics. ,vol. 89, pp. 2160- 2167 ,(2001) , 10.1063/1.1342020
Maxim Shatalov, Grigory Simin, Vinod Adivarahan, Ashay Chitnis, Shuai Wu, Radhika Pachipulusu, Vasavi Mandavilli, Kirill Simin, Jian Ping Zhang, Jin Wei Yang, Muhammad Asif Khan, Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates Japanese Journal of Applied Physics. ,vol. 41, pp. 5083- 5087 ,(2002) , 10.1143/JJAP.41.5083
G. Steude, B. K. Meyer, A. Göldner, A. Hoffmann, F. Bertram, J. Christen, H. Amano, I. Akasaki, Optical investigations of AlGaN on GaN epitaxial films Applied Physics Letters. ,vol. 74, pp. 2456- 2458 ,(1999) , 10.1063/1.123879