Demonstration of Flame Detection in Room Light Background by Solar‐Blind AlGaN PIN Photodiode

摘要: We have fabricated n-Al 0.44 Ga 0.56 N/i-Al N/p-GaN heterojunction photodiodes with a cut-off wavelength of 275 nm. The multilayer device structure was grown by metal-organic vapor phase epitaxy using low-temperature interlayer technique. Thanks to the high quality AIGaN, responsivity dropped steeply three, five and six orders magnitude at AIGaN bandedge nm, 600 1 μm, respectively. steep enables minimum leakage effective weak-flame luminescence between 250 280 For flame detection, visible filter assist selectivity attached. In addition, photodiode operated zero-bias so that darkcurrent does not exceed weak photocurrent induced luminescence. This solar-blind photosensor thus successfully responded selectively regardless whether room lighted or not.