Solar-Blind AlGaN-based Schottky Photodiodes With High Detectivity and Low Noise
作者： Necmi Biyikli , Orhan Aytur , Ibrahim Kimukin , Turgut Tut , Ekmel Ozbay
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摘要: We report on the design, fabrication and characterization of solar-blind Schottky photodiodes with high detectivity low noise. The devices were fabricated n-/n+ AlGaN/GaN hetero-structures using a microwave compatible process. Using Al0.38Ga0.62N absorption layer, true operation cutoff wavelength ∼274 nm was achieved. detectors exhibited < 400 fA dark current in 0–25 V reverse bias regime, maximum responsivity 89 mA/W around 267 nm. photovoltaic excess 2.6×1012 cmHz1/2/W, detector noise 1/f limited power density less than 3×10−29 A2/Hz at 10 KHz.
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