Prevalence of Hydrogen Incorporation and Device Applications
作者： Stephen J. Pearton , James W. Corbett , Michael Stavola
DOI: 10.1007/978-3-642-84778-3_11
关键词: Materials science 、 Optoelectronics 、 Deposition (chemistry) 、 Reverse bias 、 Schottky diode 、 Oxide 、 Hydrogen 、 Semiconductor 、 Biasing
摘要: It is becoming increasingly well recognized that atomic hydrogen can be introduced into Si and other semiconductors during a number of device processing operation steps [11.1-3]. In many cases appears to injected from water-related species in the native oxide Si, or similar Al contacts on Si. Seager et al. [11.3] have also noted possibility injection surface hydrocarbons. The incorporation these sources most obvious when there some external driving force, such as bombardment deposition overlayers, biasing oxides.
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