Transmission electron microscopy of extended crystal defects in proton bombarded and annealed gaas

摘要: Abstract The technique of cross-sectional transmission electron microscopy (TEM) has been applied to study the nature extended defects in proton bombarded GaAs as a function dose and post-bombardment anneal. For low doses (up 5 × 1015 protons cm−2) main were found be Frank dislocation loops which develop after an anneal at 500°C. In high (1017 samples damage diffuse structure was detectable by TEM without annealing. Upon annealing, networks interspersed with voids became visible. Models for growth temperature have developed experimental details analysed accordingly. From these analyses average enthalpy vacancy migration 0.3 eV is deduced GaAs.