Cross‐sectional specimens for transmission electron microscopy

摘要: Cross‐sectional views of epitaxial structures yield much information when examined by transmission electron microscopy. Since the growth direction then lies in plane observation, rather than normal to it (as is usual), overgrowth, original interface, and substrate can be imaged either simultaneously or individually. A realization suitable technique for preparing thin cross‐sectional samples described. Applications continuously graded GaAs x P1−x /GaAs step‐graded In Ga1−x P/GaP are shown.