Electrical conductivity in single crystals of GaSe x Te 1 – x solid solutions in strong electrical fields

摘要: This paper presents some results of studying the Poole–Frenkel effect with allowance for shielding in layered GaSe and GaTe single crystals their solid solutions strong electrical fields up to 105 V/cm at temperatures 103–250 K. According relationship \(\left(\frac{\sigma}{\sigma(0)}\right)^{1/2}\) log\(\frac{\sigma}{\sigma(0)} = E\sqrt{\frac{\varepsilon}{4\pi n(0)kT}}\), there exists a linear dependence between log\(\frac{\sigma}{\sigma(0)}\) field E (σ is conductivity fields, σ(0) ohmic region). The slopes these lines have been determined different (103–250 K) by estimating concentration current carriers n(0) 3 × 1013–5 1015 cm–3 region x Te1–x (x 1.00, 0.95, 0.90, 0.80, 0.70, 0.30, 0.20, 0.10, 0).