作者: Shin’ichi Morohashi , Takeshi Imamura , Shinya Hasuo
DOI: 10.1063/1.106776
关键词: Quantum tunnelling 、 Hafnium 、 Josephson effect 、 Annealing (metallurgy) 、 Materials science 、 Thermal oxidation 、 Overlayer 、 Optoelectronics 、 Condensed matter physics 、 Oxide 、 Niobium
摘要: We fabricated a niobium (Nb) Josephson junction with hafnium (Hf) overlayer. The Hf native oxide (HfOx), formed by thermal oxidation, was used as the new tunneling barrier. selected an overlayer because of its good affinity to Nb and strong oxygen affinity. same way Nb/AlOx‐Al/Nb junctions. showed excellent I‐V characteristics (Vm=40 mV Vg=3.0 mV). critical current did not change annealing up 250 °C.