High‐quality Nb/HfOx‐Hf/Nb Josephson junction

作者: Shin’ichi Morohashi , Takeshi Imamura , Shinya Hasuo

DOI: 10.1063/1.106776

关键词: Quantum tunnellingHafniumJosephson effectAnnealing (metallurgy)Materials scienceThermal oxidationOverlayerOptoelectronicsCondensed matter physicsOxideNiobium

摘要: We fabricated a niobium (Nb) Josephson junction with hafnium (Hf) overlayer. The Hf native oxide (HfOx), formed by thermal oxidation, was used as the new tunneling barrier. selected an overlayer because of its good affinity to Nb and strong oxygen affinity. same way Nb/AlOx‐Al/Nb junctions. showed excellent I‐V characteristics (Vm=40 mV Vg=3.0 mV). critical current did not change annealing up 250 °C.

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