Annealing properties of high quality Nb/Al-AlO/sub x//Nb tunnel junctions
作者： A. Oliva , R. Monaco
DOI: 10.1109/77.273061
关键词: Niobium 、 Grain boundary 、 Binary compound 、 Materials science 、 Annealing (metallurgy) 、 Tunnel junction 、 Aluminium oxides 、 Condensed matter physics 、 Current density 、 Josephson effect
摘要: High quality, low current density Josephson tunnel junctions are obtained from Nb/Al-AlO/sub x//Nb trilayers, using a SNAP process to define the junction area. A large number of has been annealed in air for several hours at temperatures as high 300/spl deg/C. The most relevant effects observed were: a) marked decrease and related increase normal-state resistance; b) under suitable conditions, barrier quality improvement measured terms subgap factor V/sub m/; remarkable result is m/ 2.5 V T=1.2 K our best sample. We believe that oxygen diffusion through Nb grain boundaries main mechanism responsible resistance device variation closely modification interfaces. >
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