Properties of RF-sputtered Nb/Al-AlO/sub x//Nb Josephson SNAP junctions
作者： V. Lacquantii , S. Maggi , E. Monticone , R. Steni
DOI: 10.1109/77.488277
关键词:
摘要: A detailed analysis of the properties Nb/Al-AlO/sub x//Nb Josephson tunnel junctions fabricated with a modified SNAP process is presented. Selective niobium anodization has been used not only as on-line monitoring junction quality, through depth profiling spectroscopy, but also to achieve controlled reduction area at micrometer level by proper choice current. The dependence most relevant electrical parameters on fabrication variables investigated. With this process, V/sub m/ high 60 mV and current densities J/sub c//spl les/2000 A/cm/sup 2/ 4.2 K are routinely obtained, thus demonstrating its feasibility for frequency mixer voltage standard applications.
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