Silicon epitaxial wafer and method for manufacturing the same

摘要: The present invention has as an objective providing a silicon epi-wafer, and manufacturing method therefor, which simplifies processing much possible in attempt to lower the cost of is capable manifesting sufficient IG effect even low-temperature device fabrication under 1080° C. furthermore, processing, enhances gettering capabilities for variety impurities wafer without performing, following slicing, any process from EG can be anticipated. As single crystal, grown via CZ so make oxygen concentration relatively high, intentionally carbon outstanding are manifested itself, performing processing. And, accordance with suitably controlling while pulling short-duration annealing at low temperature after [the invention], addition furnishing capabilities, reducing number processes by not various complex performed conventional formation, strives costs, makes granting generated that uses and, since needed when two-side mirror finishing required realize high-precision planarity, manufacture substrate measures designed increase precision.