Method for manufacturing silicon single crystal substrate for use of epitaxial layer growth
作者： Hiroki Ose , Tamotsu Maruyama
DOI:
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摘要: A method for manufacturing a silicon single crystal substrate use of an epitaxial layer growth. The comprises the steps of: growing CVD film on rear surface and peripheral side portion, substrate; removing portion in vicinity main substrate, which was grown over end by abrasive tape grinding; thereafter mirror-polishing substrate.
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