Capacitor arrangement with capacitors arranged one in the other
作者： Harald Seidl , Martin Gutsche
DOI:
关键词: Film capacitor 、 Filter capacitor 、 Capacitor 、 Capacitance 、 Electrical engineering 、 Engineering 、 Substrate (electronics) 、 Dram memory
摘要: Arrangement of capacitors which, without taking up an additional area in the semiconductor substrate, have increased capacitance compared with conventional DRAM memory cells. The arrangement according to invention is based on a combination two or more separately arranged individual substrate form one other above other. In this case, outer capacitor encloses at least plurality inner. substantial part upper lies lower capacitor. A method for fabricating also described.
lens.org 参考文章(7)
Fang-Ching Chao, Dual-packed capacitor DRAM cell structure ,(1996)
Fung-Ching Chao, Doubled stacked trench capacitor DRAM and method of fabricating ,(1991)
Koji Arita, Method of making a thin film capacitor with an improved top electrode ,(2001)
Jean-Paul Gris, Daniel Trenchat, Jean-Pierre Dupraz, Capacitor having high stability with temperature ,(1994)
Volker Lehmann, Martin Franosch, Reinhard Stengl, Hermann Wendt, Hans Reisinger, Herbert Schafer, Gerrit Lange, Method for fabricating a capacitor for a semiconductor memory configuration ,(1999)
Fang-Ching Chao, Method of manufacturing dual-packed capacitor for DRAM cells ,(1996)