Dual-packed capacitor DRAM cell structure

摘要: A dual-packed capacitor DRAM structure includes a semiconductor substrate having surface with trench disposed therein, the bottom and side walls. An insulating layer covers walls inside part of adjacent trench. pair pass transistors are symmetrically on opposite sides in substrate. Each transistor gate, source region drain region, respective regions being nearest first storage electrode is above electrically coupled to one transistors. dielectric electrode. common opposed has vertical main section extending into trench, horizontal plate parallel surface, at least extended from perpendicular surface. The electrode, lower portion together make up structure. second an upper structure,