Semiconductor memory device having a stacked capacitor cell structure

摘要: In a stacked capacitor cell structure of semiconductor memory device, the MIM (metal-insulator-metal) to be used as transfer gate comprises at least unit stack first insulation film, lower electrode, an upper another film and extension electrode. Thus, surface area electrode can enlarged without increasing plane exclusively occupied by cells. Moreover, with such configuration, since augmented thickness technical difficulties that currently known methods manufacturing devices encounter are effectively eliminated consequently troubles short-circuited electrodes become non-existent.