Capacitor arrangement for obtaining increased capacitance, and method for fabricating the same
作者： Harald Seidl , Martin Gutsche
DOI:
关键词: Substrate (electronics) 、 Electrical engineering 、 Dram memory 、 Capacitor 、 Tantalum capacitor 、 Film capacitor 、 Filter capacitor 、 Engineering 、 Capacitance
摘要: Arrangement of capacitors which, without taking up an additional area in the semiconductor substrate, have increased capacitance compared with conventional DRAM memory cells. The arrangement according to invention is based on a combination two or more separately arranged individual substrate form one other above other. In this case, outer capacitor encloses at least plurality inner. substantial part upper lies lower capacitor. A method for fabricating also described.
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