Semiconductor device employing transistor having recessed channel region and method of fabricating the same
作者： Yong-jin Choi , Kwang-Woo Lee , Min-Sung Kang , Sung-Ho Jang
DOI:
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摘要: A semiconductor device employing a transistor having recessed channel region and method of fabricating the same is disclosed. substrate has an active region. trench structure defined within The includes upper adjacent to surface region, lower buffer interposed between width may be greater than An inner wall include convex another gate electrode disposed in structure. dielectric layer
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