Method of fabricating a dynamic random access memory stacked capacitor
作者： Dong Y. Keum , Eui K. Ryou , Cheol S. Park
DOI:
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摘要: A DRAM capacitor and a method for fabricating the same, capable of achieving an increase in surface area thereby capacitance while reducing topology, by simply forming conduction layer, as charge storage electrode, comprised spacers around double-layer pin-shaped layer pattern or combination central outer having upwardly-opened dome structure surrounding pattern, using etch rate difference between insulating films.
lens.org 参考文章(5)
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Dong Y. Keum, Cheol S. Park, Method for the fabrication of dynamic random access memory capacitor ,(1994)