Method of fabricating a semiconductor memory cell having a tree-type capacitor

摘要: Fabricating a semiconductor memory device with capacitor includes forming first insulating layer on substrate, covering transfer transistor, and conducting that penetrates the is electrically coupled to one of drain or source region transistor. Thereafter, pillar formed at periphery above layer, second also sidewalls layer. Next, alternately film are least once over Then, After that, third then defined such first, second, layers, in combination form storage electrode charge capacitor. removing dielectric exposed surface layers. Finally, fourth resulting formation an opposing