High-Power DBR Laser Diodes Grown in a Single Epitaxial Step
作者： Linglin Jiang , Martin Achtenhagen , Nuditha V. Amarasinghe , Preston Young , Gary Evans
DOI: 10.1117/12.807872
关键词: Laser 、 Semiconductor laser theory 、 Laser diode 、 Materials science 、 Grating 、 Distributed Bragg reflector laser 、 Diode 、 Molecular beam epitaxy 、 Optoelectronics 、 Distributed Bragg reflector 、 Optics
摘要: Spectral and output power data of distributed Bragg reflector lasers emitting in the technologically important wavelength range from 780 nm to 1083 are presented. These devices fabricated a single molecular beam epitaxy growth step, gratings defined by holographic interferometry. dependencies on grating gain section lengths systematically investigated. Experimental for side-mode suppression ratio, mode spacing, thermal shift given near infrared between nm.
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