High-power 1.02 mu m InGaAs/AlGaAs strained quantum well lasers with GaInP buried waveguides for pumping Pr/sup 3+/-doped optical fibre amplifier
作者： K. Fukagai , H. Chida , S. Ishikawa , H. Fujii , K. Endo
DOI: 10.1049/EL:19930098
关键词:
摘要: High power 1.02 μm single spatial mode laser diodes with low-loss (3.3 cm -1 ) GaInP buried waveguides have been developed for pumping Pr 3+ -doped optical fibre amplifiers. A maximum CW light output of 415 mW and an 71 at 200 mA achieved. preliminary lifetest showed stable operation over 2300 h under 100 conditions 50 o C
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sci-hub.se 参考文章(2)
D. P. Bour, Ramon U. Martinelli, D. B. Gilbert, L. Elbaum, M. G. Harvey, Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers Applied Physics Letters. ,vol. 55, pp. 1501- 1503 ,(1989) , 10.1063/1.101590
W.J. Gignac, J.S. Major, W.E. Piano, D.W. Nam, D.F. Welch, D. Scifres, High power InGaAs/AlGaAs singlemode laser diodes suitable for pumping Pr/sup 3+/-doped fluoride fibre optic amplifiers Electronics Letters. ,vol. 28, pp. 1232- 1234 ,(1992) , 10.1049/EL:19920778