Semiconductor laser having an algainp cladding layer
作者： Tsukuru Katsuyama , Ichiro Yoshida , Jun-Ichi Hashimoto
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摘要: A semiconductor laser includes a GaAs substrate, an active layer made of material having band gap energy smaller than that GaAs, and top clad AlGaInP cladding layer. An index antiguiding type is constituted based on the above structure. The base formed protrusion strip for current injection protruding from light diffusion with Al proportion inclusive zero adjacent to strip. has thickness so as allow oscillation leak out
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