Buried ridge semiconductor laser with aluminum-free confinement layer

摘要: A buried ridge semiconductor diode laser, preferably based on the GaAs and AlGaAs family of materials. The thin upper cladding layer is overlaid with an aluminum-free etch stop confinement layer, GaInP, opposite conductivity type that layer. trench formed in extending down to Additional regrown aperture form a ridge. During regrowth, no aluminum exposed either at bottom or sides aperture. lattice matched AlGaAs. has same bandgap as sandwiching it. For lasers producing shorter wavelength radiation, content layers increased some added but less than layers.