Semiconductor device including an InGaAIN layer
作者： Nobuhiko Sawaki , Katsuki Furukawa , Yoshio Honda , Norikatsu Koide
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摘要: A semiconductor device includes a silicon substrate and compound layer formed on main plane of the substrate. The is represented by general formula InxGayAlzN (where x+y+z=1, 0≦x≦1, 0≦y≦1, 0≦z≦1). trench having as slope inclined 62 degrees from substrate, or in range within 3 an arbitrary direction plane. slope. layers AlxGayInzN 0≦z≦1) has constituted ±5 (112) are
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