Evidence for a Crucial Role Played by Oxygen Vacancies in LaMnO3 Resistive Switching Memories
作者： Zhong-tang Xu , Kui-juan Jin , Lin Gu , Yu-ling Jin , Chen Ge
关键词: Fabrication 、 Scanning transmission electron microscopy 、 Annealing (metallurgy) 、 Oxygen 、 Nanotechnology 、 Lattice constant 、 Schottky barrier 、 Materials science 、 Perovskite (structure) 、 Electronic structure 、 Chemical physics
摘要: LaMnO3 (LMO) films are deposited on SrTiO3:Nb (0.8 wt%) substrates under various oxygen pressures to obtain different concentrations of vacancies in the films. The results X-ray diffraction verify that with a decrease pressure, c-axis lattice constant LMO becomes larger, owing an increase vacancies. Aberration-corrected annular-bright-field scanning transmission electron microscopy atomic resolution and sensitivity for light elements is used, which clearly shows number increases pressure during fabrication. Correspondingly, resistive switching property more pronounced Furthermore, numerical model based modification interface induced by migration these structures proposed elucidate underlying physical origins. calculated good agreement experimental data, reveal from theoretical point view variation Schottky barrier at applied bias dominate characteristic. It promising perovskite oxides can be manipulated controlling fabrication or later annealing atmosphere.
irgrid.ac.cn参考文章(50)
T. Saitoh, A. E. Bocquet, T. Mizokawa, H. Namatame, A. Fujimori, M. Abbate, Y. Takeda, M. Takano, Electronic structure of La1-xSrxMnO3 studied by photoemission and x-ray-absorption spectroscopy Physical Review B. ,vol. 51, pp. 13942- 13951 ,(1995) , 10.1103/PHYSREVB.51.13942
M. Minohara, I. Ohkubo, H. Kumigashira, M. Oshima, Band diagrams of spin tunneling junctions La0.6Sr0.4MnO3∕Nb:SrTiO3 and SrRuO3∕Nb:SrTiO3 determined by in situ photoemission spectroscopy Applied Physics Letters. ,vol. 90, pp. 132123- ,(2007) , 10.1063/1.2717517
A. Asamitsu, Y. Tomioka, H. Kuwahara, Y. Tokura, Current switching of resistive states in magnetoresistive manganites Nature. ,vol. 388, pp. 50- 52 ,(1997) , 10.1038/40363
Kui-juan Jin, Hui-bin Lu, Qing-li Zhou, Kun Zhao, Bo-lin Cheng, Zheng-hao Chen, Yue-liang Zhou, Guo-Zhen Yang, Positive colossal magnetoresistance from interface effect in p-n junction of La0.9Sr0.1MnO3 and SrNb0.01Ti0.99O3 Physical Review B. ,vol. 71, pp. 184428- ,(2005) , 10.1103/PHYSREVB.71.184428
S. R. Basu, L. W. Martin, Y. H. Chu, M. Gajek, R. Ramesh, R. C. Rai, X. Xu, J. L. Musfeldt, Photoconductivity in BiFeO3 thin films Applied Physics Letters. ,vol. 92, pp. 091905- ,(2008) , 10.1063/1.2887908
G. I. Meijer, Who Wins the Nonvolatile Memory Race Science. ,vol. 319, pp. 1625- 1626 ,(2008) , 10.1126/SCIENCE.1153909
Can Wang, Kui-juan Jin, Zhong-tang Xu, Le Wang, Chen Ge, Hui-bin Lu, Hai-zhong Guo, Meng He, Guo-zhen Yang, Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films Applied Physics Letters. ,vol. 98, pp. 192901- ,(2011) , 10.1063/1.3589814
Peng Han, Kui-juan Jin, Hui-bin Lu, Qing-Li Zhou, Yue-Liang Zhou, Guo-Zhen Yang, The mechanism study on transport properties in perovskite oxide p-n junctions Applied Physics Letters. ,vol. 91, pp. 182102- ,(2007) , 10.1063/1.2804608
S. Asanuma, H. Akoh, H. Yamada, A. Sawa, Relationship between resistive switching characteristics and band diagrams of Ti / Pr 1 − x Ca x MnO 3 junctions Physical Review B. ,vol. 80, pp. 235113- ,(2009) , 10.1103/PHYSREVB.80.235113
Yoshiro Nohara, Susumu Yamamoto, Takeo Fujiwara, Electronic structure of perovskite-type transition metal oxides La M O 3 ( M = Ti ∼ Cu ) by U + GW approximation Physical Review B. ,vol. 79, pp. 195110- ,(2009) , 10.1103/PHYSREVB.79.195110