作者: Arpana Agrawal , Tanveer A. Dar , Pratima Sen , Deodatta M. Phase
DOI: 10.1063/1.4870864
关键词: Zinc 、 Pulsed laser deposition 、 X-ray photoelectron spectroscopy 、 Thin film 、 Materials science 、 Doping 、 Scattering 、 Wide-bandgap semiconductor 、 Condensed matter physics 、 Magnetoresistance
摘要: We report negative magnetoresistance in pulsed laser deposited single phase ZnO and Mg0.268Zn0.732O films attribute it to the presence of oxygen interstitials (Oi) zinc (Zni) as observed X-ray photoelectron spectra films. An interesting feature reduction at low temperatures large fields film is explained by taking into account localized scattering.