作者: Y. M. Guo , L. P. Zhu , J. Jiang , L. Hu , C. L. Ye
DOI: 10.1063/1.4742172
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摘要: The valence band offset (VBO) of a n-ZnO/p-MgxNi1−xO heterojunction grown by pulsed laser deposition was investigated x-ray photoelectron spectroscopy. From the directly measured VBO 1.64 ± 0.05 eV, −2.26 ± 0.05 eV conduction derived. This indicates that ZnO/MgxNi1−xO has type-II (staggered) alignment. minimum (CBM) shifts to higher energy with Mg doping relative n-ZnO/p-NiO heterojunction. Thus, position CBM can be controlled concentration.