Valence band offset of n-ZnO/p-MgxNi1−xO heterojunction measured by x-ray photoelectron spectroscopy

作者: Y. M. Guo , L. P. Zhu , J. Jiang , L. Hu , C. L. Ye

DOI: 10.1063/1.4742172

关键词:

摘要: The valence band offset (VBO) of a n-ZnO/p-MgxNi1−xO heterojunction grown by pulsed laser deposition was investigated x-ray photoelectron spectroscopy. From the directly measured VBO 1.64 ± 0.05 eV, −2.26 ± 0.05 eV conduction derived. This indicates that ZnO/MgxNi1−xO has type-II (staggered) alignment. minimum (CBM) shifts to higher energy with Mg doping relative n-ZnO/p-NiO heterojunction. Thus, position CBM can be controlled concentration.

参考文章(25)
R. J. Powell, W. E. Spicer, Optical Properties of NiO and CoO Physical Review B. ,vol. 2, pp. 2182- 2193 ,(1970) , 10.1103/PHYSREVB.2.2182
Steven P. Kowalczyk, J. T. Cheung, E. A. Kraut, R. W. Grant, CdTe-HgTe (¯1¯1¯1) Heterojunction Valence-Band Discontinuity: A Common-Anion-Rule Contradiction Physical Review Letters. ,vol. 56, pp. 1605- 1608 ,(1986) , 10.1103/PHYSREVLETT.56.1605
Y. F. Li, B. Yao, Y. M. Lu, B. H. Li, Y. Q. Gai, C. X. Cong, Z. Z. Zhang, D. X. Zhao, J. Y. Zhang, D. Z. Shen, X. W. Fan, Valence-band offset of epitaxial ZnO /MgO (111) heterojunction determined by x-ray photoelectron spectroscopy Applied Physics Letters. ,vol. 92, pp. 192116- ,(2008) , 10.1063/1.2924279
Ricky W. Chuang, Rong-Xun Wu, Li-Wen Lai, Ching-Ting Lee, ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique Applied Physics Letters. ,vol. 91, pp. 231113- ,(2007) , 10.1063/1.2822817
Guotong Du, Yongguo Cui, Xia Xiaochuan, Xiangping Li, Huichao Zhu, Baolin Zhang, Yuantao Zhang, Yan Ma, Visual-infrared electroluminescence emission from ZnO∕GaAs heterojunctions grown by metal-organic chemical vapor deposition Applied Physics Letters. ,vol. 90, pp. 243504- ,(2007) , 10.1063/1.2748093
G. Martin, A. Botchkarev, A. Rockett, H. Morkoç, Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy Applied Physics Letters. ,vol. 68, pp. 2541- 2543 ,(1996) , 10.1063/1.116177
Peter Zurcher, Robert S. Bauer, Photoemission determination of dipole layer and VB‐discontinuity formation during the MBE growth of GaAs on Ge(110) Journal of Vacuum Science and Technology. ,vol. 1, pp. 695- 700 ,(1983) , 10.1116/1.571980
K. Venkateswara Rao, C.S. Sunandana, XRD, microstructural and EPR susceptibility characterization of combustion synthesized nanoscale Mg1−xNixO solid solutions Journal of Physics and Chemistry of Solids. ,vol. 69, pp. 87- 96 ,(2008) , 10.1016/J.JPCS.2007.08.006
Ya. I. Alivov, J. E. Van Nostrand, D. C. Look, M. V. Chukichev, B. M. Ataev, Observation of 430 nm Electroluminescence from ZnO/GaN Heterojunction Light-Emitting Diodes Applied Physics Letters. ,vol. 83, pp. 2943- 2945 ,(2003) , 10.1063/1.1615308
C-L Wu, C-H Shen, S Gwo, None, Valence band offset of wurtzite InN/AlN heterojunction determined by photoelectron spectroscopy Applied Physics Letters. ,vol. 88, pp. 032105- ,(2006) , 10.1063/1.2165195