Raman, AFM, and TEM profiling of QD multilayer structures
作者：
DOI: 10.1088/2053-1591/2/3/035003
关键词: Molecular beam epitaxy 、 Quantum dot 、 Analytical chemistry 、 Nanostructure 、 Materials science 、 Conductive atomic force microscopy 、 Phonon 、 Transmission electron microscopy 、 High-resolution transmission electron microscopy 、 Raman spectroscopy 、 Optoelectronics
摘要: We report on a combined atomic force microscopy, Raman spectroscopy, and transmission electron microscopy study of InAs/Al(Ga)As AlAs/InAs quantum dot nanostructures grown by molecular beam epitaxy in the Stranski–Krastanov growth mode (001)-oriented GaAs substrates. Structure periods 50 nm 100 were determined cleaved as well ion-milled sample surfaces confirmed high resolution microscopy. Spatially resolved spectroscopy analysis beveled surface allows profiling intensity phonon modes. An optimal access to spatially dependent changes spectra is achieved polishing samples at an angle 5–7 degrees with respect original plane. Such allowed localization individual layers. This opens way structural characterization multilayers combination spectroscopy.
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