Capping process of InAs/GaAs quantum dots grown by molecular-beam epitaxy
作者： Q. Gong , P. Offermans , R. Noetzel , P.M. Koenrad , J.H. Wolter
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摘要: The capping process of self-assembled InAs quantum dots (QDs) grown on GaAs(100) substrates by molecular-beam epitaxy is studied cross-sectional scanning tunneling microscopy. GaAs at 500/spl deg/C causes leveling the QDs which completely suppressed decreasing growth temperature to 300/spl deg/C. At elevated QD driven in initial stage while it quenched during continued overgrowth when become buried. For common rates, both phenomena take place a similar time scale. Therefore, size and shape buried are determined delicate interplay between driving quenching controlled rate temperature.
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