Shape preservation of Ge/Si(001) islands during Si capping
作者： A. Rastelli , E. Müller , H. von Känel
DOI: 10.1063/1.1453476
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摘要: Coherently strained Ge/Si(001) islands were overgrown with Si at temperatures ranging from 300 to 550 °C. The induced shape changes investigated different stages of the capping process by scanning tunneling microscopy and high-resolution transmission electron microscopy. Islands found strongly flatten intermix above ∼450 °C. By contrast, a good preservation as well recovery flat surface buried can be achieved low temperature 300 °C followed growth
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