Shape and surface morphology changes during the initial stages of encapsulation of InAs/GaAs quantum dots
作者： P.B Joyce , T.J Krzyzewski , P.H Steans , G.R Bell , J.H Neave
DOI: 10.1016/S0039-6028(01)01479-0
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摘要: Abstract The change in shape and surface morphology of InAs/GaAs(0 0 1) quantum dots (QDs) during their initial encapsulation by GaAs has been studied using reflection high energy electron diffraction (RHEED) scanning tunnelling microscopy (STM). the QDs changes significantly earliest stages overgrowth. In situ RHEED measurements show a significant chevron angle after deposition only 2 ML GaAs, before losing all crystallographic structure as more is deposited. STM results indicate mass transport, height decreases faster than rate at which capping layer deposited effectively “collapse” encapsulation. area partially capped increases with increasing there an anistropic increase elongation along [ 1 1 0] azimuth.
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