Structural and optical properties of columnar (In,Ga)As quantum dots on GaAs (100)
作者： J. He , P. Offermans , P.M. Koenrad , Q. Gong , G.J. Hamhuis
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摘要: Control of the height (In,Ga)As quantum dots (QDs) on GaAs (100) substrates is presented. Columnar QDs that are homogeneous both in composition and shape along growth direction created by molecular beam epitaxy. The columnar formed InAs seed alternating deposition thin intermediate layers monolayers with extended interruptions after each layer. controlled varying number GaAs/InAs layers. With increased photoluminescence (PL) emission wavelength red-shifted line width narrows. Uncapped (surface QDs) emit PL at a long peak 1.45 /spl mu/m RT due to reduced compressive strain.
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