Leveling and rebuilding: An approach to improve the uniformity of (In,Ga)As quantum dots
作者： Q. Gong , R. Nötzel , G. J. Hamhuis , T. J. Eijkemans , J. H. Wolter
DOI: 10.1063/1.1506780
关键词: Quantum dot 、 Solid-state physics 、 Molecular beam epitaxy 、 Gallium arsenide 、 Epitaxy 、 Photoluminescence 、 Optoelectronics 、 Materials science 、 Superlattice 、 Layer (electronics)
摘要: We report on an approach to improve the uniformity of a single layer (In,Ga)As quantum dots (QDs) grown by molecular-beam epitaxy. The key concept our is level and rebuild QDs during insertion short period GaAs/InAs superlattice between QD GaAs capping layer. For optimized thickness number periods this process results in uniform with narrow photoluminescence line width 20 meV at 4.5 K.
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