Impact of Thermal Treatment on PECVD Al2O3 Passivation Layers
作者： S. Kühnhold , B. Kafle , L. Kroely , P. Saint-Cast , M. Hofmann
DOI: 10.1016/J.EGYPRO.2012.07.063
关键词: Annealing (metallurgy) 、 Limiting oxygen concentration 、 Thermal treatment 、 Analytical chemistry 、 Plasma-enhanced chemical vapor deposition 、 Crystallization 、 Temperature treatment 、 Passivation 、 Fourier transform infrared spectroscopy 、 Materials science
摘要: We present a detailed study about the influence of post-deposition temperature treatment on PECVD Al2O3 passivation layers. Fourier transform infrared spectroscopy (FTIR) and quasi-steady-state photoconductance (QSSPC) were applied for characterization. observed several indications structural changes layer with annealing duration, thickness. A shift an increase Si-O vibrational mode (1100980 cm -1 ) in FTIR measured changing thickness is presented. Structural temperature, thickness, caused by oxygen concentration within SiOx are different spectra. also detected water band at 1650-1630 other OH components around 3200 -400cm depending time. For 820°C, dramatic change peak (650-700 observed. This probably due to crystallization film. © 2012 Published Elsevier Ltd. Selection peer-review under responsibility scientific committee SiliconPV conference
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